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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FFM301 THRU FFM307 SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.24 gram DO-214AB MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 0.125 (3.17) 0.115 (2.92) 0.280 (7.11) 0.260 (6.60) 0.245 (6.22) 0.220 (5.59) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. o 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) 0.004 (0.102) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 55o C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Thermal Resistance Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 3.0A DC Maximum Full Load Reverse Current,Full cycle Average at TA = 55oC Maximum DC Reverse Current at @TA = 25 o C Rated DC Blocking Voltage @TA = 125 oC Maximum Reverse Recovery Time (Note 4) SYMBOL VF IR trr 150 FFM301 FFM302 FFM303 FFM304 FFM305 FFM306 FFM307 UNITS 1.3 50 10 300 250 500 Volts uAmps uAmps uAmps nSec 2001-5 SYMBOL VRRM VRMS VDC IO IFSM (Note 2) RJL (Note 3) RJA CJ TJ, TSTG FFM301 FFM302 FFM303 FFM304 FFM305 FFM306 FFM307 UNITS 50 35 50 100 70 100 200 140 200 400 280 400 3.0 200 15 50 60 -65 to + 175 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps Amps 0 0 C/ W C/ W pF 0 C NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC 2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal. 3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal. 4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A RATING AND CHARACTERISTIC CURVES ( FFM301 THRU FFM307 ) AVERAGE FORWARD CURRENT, (A) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT, (A) FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 200 100 5 4 3 2 1 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, ( ) FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Single Phase Half Wave 60Hz Resistive or Inductive Load 50 30 20 10 1 5 10 50 NUMBER OF CYCLES AT 60Hz 100 8.3ms Single Half Sine-Wave (JEDED Method) INSTANTANEOUS FORWARD CURRENT, (A) FIG. 4 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) 20 10 3.0 1.0 0.3 0.1 .03 .01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) TJ = 25J Pulse Width=300uS 1% Duty Cycle 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 100 TJ = 25 FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (-) (+) 25 Vdc (approx) (-) D.U.T 0 PULSE GENERATOR (NOTE 2) -0.25A 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 1cm SET TIME BASE FOR 50/100 ns/cm RECTRON |
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